The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Apr. 19, 2001
Applicant:
Inventors:
Assignee:
Murata Manufacturing Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1265 ;
U.S. Cl.
CPC ...
H01L 2/1265 ;
Abstract
A method for forming a p-type semiconductor film comprises the steps of: providing on a substrate a group II-VI compound semiconductor film which is doped with a p-type impurity and comprises either Mg Zn O (0≦X≦1) or Cd Zn O (0≦X≦1) and activating the p-type impurity by annealing the doped semiconductor film.