The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Oct. 12, 2001
Ludwig Burkhard, München, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A method of producing an integrated circuit configuration where trenches are formed surrounding active regions in a main surface of a semiconductor substrate. A photoresist layer is applied to the insulating layer and structured forming a mask using a data processing device, by the following steps: Providing an idealized pattern representing trenches with contours corresponding to contours of the trenches. Producing an idealized mask pattern on the basis of the idealized pattern shifted by an allowance in comparison with the idealized pattern, the idealized mask pattern has surface zones whose distance apart is shorter than a given minimum measurement. The idealized mask pattern is used to produce a further idealized mask pattern in which the surface zones are replaced by minimum surface elements with length measurements which are greater than the given minimum measurement. The trenches are then filled by depositing an insulating layer using the formed mask.