The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Dec. 12, 2001
Won-tai Ki, Yongin, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
An E-beam mask for use in a lithographic process includes a main pattern of stripes of patterned chrome or tungsten formed on a membrane. The stripes of the main pattern are inspected for defects. Dummy stripes corresponding to a defective stripe of the main pattern are formed on the membrane in spare room outside the region bounded by the main pattern. E-beam exposure processes are then carried out using only the non-defective stripes of the main pattern, and the non-defective dummy stripes instead of a defective stripe of the main pattern once the lithographic process has progressed to the defective stripe of the main pattern. When the lithographic process is being used to manufacture DRAM cells, some of the stripes of the main pattern will have the same chrome or tungsten patterns. As long as all of these similar stripes of the main pattern are not defective, then the E-beam processes can be carried out in a sequence using the non-defective stripes of the main pattern only. However, if all of the similar stripes of the main pattern are determined to be defective, a corresponding dummy stripe is produced on the membrane. In this case, the dummy stripe is used in the lithographic process instead of the similar defective stripes of the main pattern.