The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2003

Filed:

Mar. 28, 2001
Applicant:
Inventors:

Hiroshi Furukubo, Nagoya, JP;

Hirotake Yamada, Nagoya, JP;

Hiromichi Kobayashi, Nagoya, JP;

Assignee:

NKG Insulators, Ltd., Nagoya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 9/04 ;
U.S. Cl.
CPC ...
B32B 9/04 ;
Abstract

A film structure including a silicon carbide film formed on a surface of an aluminum nitride substrate. The substrate has a first base plane, a second base plane positioned downward with respect to the first base plane and a step plane arranged in an intersecting direction between the first base plane and the second base plane. One or more chamfered planes are arranged between the first base plane and the step plane so as to form a plurality of corner portions each having an angle larger than 130°. Alternatively, at least one round portion having a curvature radium of larger than 0.05 mm is arranged between the first base plane and the step plane.


Find Patent Forward Citations

Furukubo, Hiroshi. (2003). Method of forming silicon carbide film on aluminum nitride, film structure and silicon carbide film (U.S. Patent No. 6617059). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6617059

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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