The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Jan. 18, 2001
Applicant:
Inventors:
Masashi Yoshimi, Kobe, JP;
Takafumi Fujihara, Kobe, JP;
Assignee:
Kaneka Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1205 ;
U.S. Cl.
CPC ...
H01L 2/1205 ;
Abstract
A semiconductor thin film which is deposited by using a chemical vapor deposition method at an underlying layer temperature of 400° C. or less, and contains, as main component elements, a Group IV atom and hydrogen atom. A temperature dependency of an amount of release of hydrogen atoms within the film when the film is heated from room temperature exhibits a profile having a peak of the hydrogen releasing amount at 370° C. or higher and 410° C. or less, and a half-value width of the peak is 30° C. or less.