The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Mar. 16, 2001
Potential detecting circuit having wide operating margin and semiconductor device including the same
Applicant:
Inventors:
Mako Okamoto, Hyogo, JP;
Yasuhiko Taito, Hyogo, JP;
Fukashi Morishita, Hyogo, JP;
Akira Yamazaki, Hyogo, JP;
Mihoko Akiyama, Hyogo, JP;
Nobuyuki Fujii, Hyogo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 5/22 ;
U.S. Cl.
CPC ...
H03K 5/22 ;
Abstract
In a detector included in a VPP generating circuit in a DRAM, an external power supply potential is applied to the gate of an N-channel MOS transistor for regulating a through current of an inverter for outputting an inversion signal of an output signal of a comparator. Since a drain-source voltage of the N-channel MOS transistor can be set to be lower than a threshold voltage Vthn of the N-channel MOS transistor, an operation margin of the detector under conditions of a low voltage and a low temperature is made wider as compared with a conventional technique.