The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Jul. 27, 2001
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A spacer is formed on a side wall of a gate electrode formed over a substrate, and a dielectric interlayer is then formed over the substrate, the gate electrode and the spacer. A region of the dielectric interlayer is then subjected to a first etching process using an etching gas. An emission amount of a chemical compound emitted during the first etching process is detected, where the chemical compound is produced by a chemical reaction of the etching gas and the spacer. The region of the dielectric interlayer is then subjected to a second etching process upon detecting that the emission amount of the chemical compound has reached a given level. The second etching process may be continued until a contact hole is defined in the dielectric interlayer.