The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Dec. 21, 2000
Toyoji Chino, Osaka, JP;
Abstract
A method for fabricating a semiconductor device of the present invention comprises the steps of: a) depositing a masking film on a first compound semiconductor layer formed on a semiconductor substrate; b) patterning the masking film so that the film has an opening; c) etching away at least an uppermost part of the first semiconductor layer, which part is located inside the opening and includes a degraded layer formed in the step a) or b), using a first etchant and the masking film; and d) patterning the first semiconductor layer by etching away another part of the first layer using a second etchant and the masking film. That another part is located inside the opening and does not include the uppermost part with the degraded layer. The second etchant allows for etching the first layer at a rate lower than a rate realized by the first etchant.