The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Aug. 30, 2002
Minh Van Ngo, Fremont, CA (US);
Dawn Hopper, San Jose, CA (US);
Wenmei Li, Sunnyvale, CA (US);
Kelwin King Wai Ko, San Jose, CA (US);
Kuo-Tung Chang, Saratoga, CA (US);
Tyagamohan Gottipati, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Device leakage due to spacer undercutting is remedied by depositing a BPSG, SA-CVD oxide liner and flowing it into the undercut regions, followed by gap filling with a P-doped HDP oxide layer. Embodiments include depositing a BPSG, SA-CVD oxide liner containing 4 to 6 wt.% boron, at a thickness of 1,000 Å to 1,800 Å, over closely spaced apart non-volatile transistors and heating during or subsequent to deposition to flow the BPSG, SA-CVD oxide liner into the undercut regions of the sidewall spacers of the gate stacks. Gap filling is then completed by depositing the layer of P-doped HDP at a thickness of 6,000 Å to 10,000 Å.