The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Dec. 31, 2001
Applicant:
Inventors:
Hameed A. Naseem, Fayetteville, AR (US);
M. Shahidul Haque, Fayetteville, AR (US);
William D. Brown, Fayetteville, AR (US);
Assignee:
The Board of Trustees of the University of Arkansas, Little Rock, AR (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ;
Abstract
A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1×10 dopant atoms per cm of silicon.
Quick Actions:
Naseem, Hameed. (2003). Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells (U.S. Patent No. 6613653). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6613653
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile