The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Mar. 14, 2002
Infineon Technologies AG, Munich, DE;
Abstract
The integrated ferroelectric semiconductor memory is fabricated according to the stack cell principle. A ferroelectric capacitor module is formed on an intermediate oxide above a selection transistor located in or on a semiconductor wafer. The capacitor module is brought into conductive contact by its bottom capacitor electrode with an electrode of the selection transistor by means of an electrically conductive plug leading through the intermediate oxide. A layer system of a conductive oxygen diffusion barrier and a conductive adhesion layer is deposited directly below the bottom capacitor electrode, and the adhesion layer and the overlying oxygen diffusion barrier are deposited directly into the contact hole and form the plug at least in the region lying directly below the bottom capacitor electrode.