The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Jul. 15, 2002
Applicant:
Inventors:
Rajesh S. Nair, Chandler, AZ (US);
Takeshi Ishiguro, Aizuwakamatsu, JP;
Assignee:
Semiconductor Components Industries LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1337 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/1337 ; H01L 2/976 ;
Abstract
A semiconductor device ( ) is formed to have a well ( ) in a substrate ( ). The well and the substrate have the same doping type, for example both P-type or both N-type. Low resistance contact regions ( ) of a second conductivity type are formed to at least abut the well. A drain ( ) is formed within one low resistance contact region. A source ( ) is formed in the substrate and laterally displaced from the other low resistance contact region. A buried layer ( ) is formed laterally across the well.