The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2003

Filed:

Aug. 10, 1999
Applicant:
Inventors:

Kan Yasui, Kokubunji, JP;

Souichi Katagiri, Kodaira, JP;

Shigeo Moriyama, Tama, JP;

Yoshio Kawamura, Kokubunji, JP;

Ryousei Kawai, Kodaira, JP;

Sadayuki Nishimura, Yokohama, JP;

Masahiko Sato, Kokubunji, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 1/00 ; B24B 1/900 ;
U.S. Cl.
CPC ...
B24B 1/00 ; B24B 1/900 ;
Abstract

A method for fabricating a semiconductor device includes grindstone surface activation treatment by means of a brush or ultrasonic wave carried out when a concave/convex pattern of a semiconductor wafer is planarized by polishing a semiconductor wafer held by a wafer holder by using a grindstone constituted of abrasive grains and material for holding the abrasive grains onto which the semiconductor wafer is pressed with relative motion. The semiconductor wafer is processed with high removal rate and the polishing thickness is controlled accurately.


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