The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2003

Filed:

Aug. 15, 2002
Applicant:
Inventor:

Makoto Nakazawa, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 4/00 ; G01B 1/124 ;
U.S. Cl.
CPC ...
G01J 4/00 ; G01B 1/124 ;
Abstract

The surface form of a semiconductor thin film such as a polysilicon film formed on a semiconductor substrate is measured through spectro-ellipsometry or measured by performing an IPA quantitative analysis through GC. Mass (gas chromatography) after exposing the semiconductor thin film to IPA (isopropyl alcohol) vapor and drying the semiconductor thin film. Through either of these methods, the surface form of the polysilicon film can be easily and quickly measured.


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