The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2003
Filed:
Oct. 24, 2000
Tatsuya Ohkubo, Hitachinaka, JP;
Genshiro Kawachi, Hitachi, JP;
Yoshiro Mikami, Hitachi, JP;
Kazuhito Masuda, Hitachi, JP;
Hiroshi Kageyama, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
To prevent an n-channel thin-film transistor from being deteriorated by hot holes generated in a gate-negative pulse mode. A thin polysilicon film is provided with a p-type semiconductor region in contact with a channel region The p-type semiconductor region is electrically connected to nowhere except the channel region Holes induced on the surface due to a gate-negative pulse are further supplied from the p-type semiconductor region An electric field established by the gate-negative pulse is relaxed by the holes, fewer hot holes are injected into the gate oxide film, and the TFT characteristics are less deteriorated.