The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2003
Filed:
Mar. 14, 2001
Applicant:
Inventor:
Tomio Takiguchi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7082 ; H01L 2/7102 ; H01L 3/111 ; H01L 2/710 ; H01L 2/976 ; H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 2/7082 ; H01L 2/7102 ; H01L 3/111 ; H01L 2/710 ; H01L 2/976 ; H01L 2/994 ;
Abstract
A bipolar transistor is provided with a collector layer of a first conductive type, a base layer of a second conductive type formed at a surface of the collector layer, and an emitter layer of the first conductive type formed at a surface of the base layer. An emitter electrode is connected to the emitter layer. Base electrodes are connected to the base layer and surround the emitter electrode. Emitter electrodes are connected to the collector layer and surround the base electrodes.
Takiguchi, Tomio. (2003). Bipolar transistor and semiconductor device having the same (U.S. Patent No. 6611043). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6611043
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile