The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2003
Filed:
May. 08, 2002
Kenji Ichikawa, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A metal-oxide-semiconductor protection transistor is formed in an active region of a semiconductor layer. The active region includes source and drain diffusion layers, which may be partly silicided, and a body region. A gate electrode extends across the active region above the body region. The breakdown voltage in the edge areas of the active regions is increased by increasing the gate length in the edge areas, by increasing the width of the active region below the gate electrode, or by increasing the non-silicided length of the source and drain diffusion layers in the edge areas. The edge areas of the active region are thereby protected from thermal damage during electrostatic discharges.