The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2003
Filed:
May. 12, 2000
Hiroyuki Kanaya, Yokohama, JP;
Toyota Morimoto, Sagamihara, JP;
Osamu Hidaka, Hachioji, JP;
Yoshinori Kumura, Yokohama, JP;
Iwao Kunishima, Yokohama, JP;
Tsuyoshi Iwamoto, Urayasu, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device having a semiconductor substrate; an insulating film formed on said semiconductor substrate; a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode which are stacked sequentially on the insulating film; a first hydrogen barrier film; a first inter-layer insulating film covering said ferroelectric capacitor; and a second inter-layer insulating film stacked on the first inter-layer insulating film, the first hydrogen barrier film being interposed between the first and second interlayer insulating films is proposed.