The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2003

Filed:

May. 15, 2001
Applicant:
Inventor:

Mathieu Roy, Joue les Tours, FR;

Assignee:

STMicroelectronics S.A., Montrouge, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/10232 ; H01L 2/987 ;
U.S. Cl.
CPC ...
H01L 3/10232 ; H01L 2/987 ;
Abstract

A power component formed in an N-type silicon substrate, the lower and upper surfaces of which respectively include a first and a second P-type region that do not extend to the component periphery, a high voltage being capable of existing between the first and second regions and having to be withstood by the junctions between the first and second regions and the substrate. A deep insulating region that does not join the first region is provided at the lower periphery of the component, the lower surface of the substrate between said deep insulating region and the first region being coated with an insulating layer, the height of the deep insulating region being greater than that of a possible soldering upward extension formed during the soldering of the lower surface on a heat sink.


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