The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2003
Filed:
Oct. 18, 2000
Yasuhisa Yamada, Tokyo, JP;
NEC Electronics Corporation, , JP;
Abstract
An electron beam emitted by an electron beam source, is deflected by a first pattern selection deflector and irradiated onto a predetermined aperture on a first mask. The electron beam penetrating through the first mask is deflected by a second pattern selection deflector, irradiates onto a second mask, and further irradiates on a semiconductor wafer provided on a wafer stage, as a result, a partial blank shot is executed. On the second mask, a cell projection exposure aperture to be drawn a center portion pattern of a cell array pattern, is provided and a cell projection exposure aperture for an excess pattern is not provided. On the first mask, a main aperture and an aperture to be irradiated an excess pattern portion having an area of 1/N of the main aperture to the semiconductor wafer, are provided, wherein N is an integer.