The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2003
Filed:
Oct. 15, 2001
Jun Young Kim, Choongchungbook Do, KR;
Sung Hyun Ha, Choongchungbook Do, KR;
Kwang Duk Ahn, Seoul 130-650, KR;
Jong Hee Kang, Seoul 130-650, KR;
Other;
Abstract
A bottom antireflective coating layer is made from the compositions of organic photosensitive materials that contain isoflavone chromophore by photolithography utilizing a deep ultraviolet light source for producing a submicro-level, large-scale integrated chip. A copolymer containing an isoflavone chromophore is used as a bottom antireflective coating layer for fabricating a 64-megabit or gigabit DRAM. The antireflective coating layer enables not only the suppression of reflections of light that occur under the substrate layer but also the removal of standing waves. Consequently, a high-resolution sub-micron of a 100˜200 nm integrated circuit is able to be stably formed. Therefore, it is possible to increase the production of semiconductors.