The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2003
Filed:
Jan. 16, 2001
Peter J. Zdebel, Austin, TX (US);
Julio Carlos Costa, Phoenix, AZ (US);
Semiconductor Components Industries LLC, Phoenix, AZ (US);
Abstract
A method of manufacturing a semiconductor component includes forming an electrically insulative layer ( ) over a semiconductor substrate where a first portion of the electrically insulative layer is located over a first region ( ) of the semiconductor substrate and where a second portion of the first layer is located over a second region ( ) of the semiconductor substrate. An isolation region ( ) is formed in the semiconductor substrate between the first and second regions of the semiconductor substrate. After forming the isolation region, the second portion of the first layer is removed, and, after removing the second potion of the first layer, an epitaxial layer ( ) is grown over the second region of the semiconductor substrate.