The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2003
Filed:
Jun. 06, 2001
Hidenori Sato, Tokyo, JP;
Shinya Soeda, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Chiyoda-ku, JP;
Abstract
A first silicide protection film is deposited on a silicon substrate, a first resist pattern having an opening at a prescribed position is formed, a portion of the first silicide protection film exposed from the opening of the first resist pattern is removed to form a first opening in the first silicide protection film, an N diffusion layer is formed in a portion of the silicon substrate exposed from the first opening, the first resist pattern is removed, and a metallic film is deposited to form a first silicide layer on the N diffusion layer according to a silicide process. Thereafter, a second silicide protection film is deposited, a second resist pattern having an opening at a prescribed position is formed, portions of the first and second silicide protection films exposed from the opening of the second resist pattern are removed to form a second opening in the first and second silicide protection films, a P diffusion layer is formed in a portion of the silicon substrate exposed from the second opening, the second resist pattern is removed, and a metallic film is deposited to form a second silicide layer on the P diffusion layer according to the silicide process. Therefore, silicide layers having characteristics optimum to the diffusion layers can be formed, and the number of mask matching operations can be reduced.