The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2003
Filed:
Jan. 12, 2001
Akito Kuramata, Kawasaki, JP;
Kazuhiko Horino, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A substrate is made of SiC. A plurality of Al Ga N patterns (0≦x≦1) is formed on a surface of the substrate and dispersively distributed in an in-plane of the substrate. An Al Ga N buffer layer (0≦y≦1) covers the surface of the substrate and the Al Ga N patterns. A laser structure is formed on the Al Ga N buffer layer. Since the AlGaN buffer layer is grown by using the AlGaN patterns as seed crystals, a dislocation density of a predetermined region in the AlGaN buffer layer can be lowered. The characteristics of a laser structure can be improved by forming the laser structure above the region having a low dislocation density. Since the AlGaN pattern has electric conductivity, the device resistance can be suppressed from being increased.