The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2003
Filed:
Sep. 11, 2000
Applicant:
Inventors:
Makoto Inai, Omihachiman, JP;
Hidehiko Sasaki, Moriyama, JP;
Assignee:
Murata Manufacturing Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/10328 ; H01L 3/10336 ;
U.S. Cl.
CPC ...
H01L 3/10328 ; H01L 3/10336 ;
Abstract
A field-effect semiconductor device includes a channel layer; a barrier structure formed on the channel layer and including a plurality of semiconductor layers; a plurality of ohmic electrodes formed above the barrier structure; and a Schottky electrode formed on the barrier structure between the ohmic electrodes. The barrier structure has an electron-affinity less than that of the channel layer and includes at least two heavily doped layers and a lightly doped layer provided therebetween.
Inai, Makoto. (2003). Field-effect semiconductor device (U.S. Patent No. 6605831). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6605831
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile