The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2003
Filed:
Dec. 30, 1999
Tammy Zheng, Fremont, CA (US);
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
A process increases the etch control on the thin gate oxidation near the edges of a poly-silicon or amorphous silicon gate stack. Formation of micro-trenches, while achieving nearly vertical profiles, is substantially minimized. In a method for manufacturing a semiconductor device gate stack a breakthrough etch removes residual oxide and anti-reflection coating until the layer of amorphous silicon is exposed. A bulk etch removes the amorphous silicon until about 40% remains. The remaining amorphous silicon layer is etched with a high selectivity etch until oxide is exposed. Any residual poly or amorphous silicon is etched with a very high-selectivity ratio over etch until clear.