The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2003
Filed:
May. 10, 2002
Applicant:
Inventors:
Mona Eissa, Plano, TX (US);
Guoqiang Xing, Plano, TX (US);
Kenneth D. Brennan, Austin, TX (US);
Hyesook Hong, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/1302 ;
Abstract
Treating a low-k dielectric layer ( ) using a highly oxidizing wet solution (e.g., H SO ) to improve patterning. Resist poisoning occurs due to an interaction between low-k films ( ), such as OSG, and DUV resist ( ). The wet treatment is performed to either pre-treat a low-k dielectric ( ) before forming the pattern ( ) or during a rework of the pattern ( ) to reduce resist poisoning.
Quick Actions:
Eissa, Mona. (2003). Treatment of low-k dielectric films to enable patterning of deep submicron features (U.S. Patent No. 6605536). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6605536
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile