The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2003
Filed:
May. 11, 2001
Sundar Chetlur, Singapore, SG;
Jennifer M. McKinley, Orlando, FL (US);
Minesh A. Patel, Orlando, FL (US);
Pradip K. Roy, Orlando, FL (US);
Jonathan Zhong-Ning Zhou, Orlando, FL (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
The present invention provides a method of manufacturing a semiconductor device that includes incorporation of a hydrogen isotope at a relatively high processing temperature during gate oxidation or polysilicon gate electrode deposition to maximize incorporation of hydrogen isotope at interfaces deliberately created during oxidation (such as graded oxidation) as multilayered poly/alpha-silicon deposition process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile