The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2003
Filed:
May. 29, 2002
Masato Kawata, Tokyo, JP;
Kuniko Kikuta, Tokyo, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
To provide a non-volatile semiconductor memory device in which the word line resistance can be decreased in resistance without being accompanied by increase in chip area, and a manufacturing method for the non-volatile semiconductor memory device. In a non-volatile semiconductor memory device having a floating gate ( of FIG. ) and a control gate ( of FIG. ), a contact groove ( of FIG. ) extending in the direction of a word line ( of FIG. ) is provided on an interlayer insulating film ( of FIG. ) formed as an upper layer of the control gate, and an electrically conductive member of, for example, tungsten, is embedded in the contact groove to establish electrical connection between the wiring metal ( of FIG. ) formed as an upper layer of the interlayer insulating film and the control gate with a large contact area.