Method of fabricating thin film transistor

Abstract

In the method of fabricating a TFT in accordance with the present invention, a first semiconductor layer to be used as a channel is formed on a portion of an insulating layer in correspondence with an underlying gate electrode A second semiconductor layer ohmic contact layer and metal layer are then successively formed on the insulating layer and first semiconductor layer A photoresist pattern is next formed on a portion of the ohmic contact layer other than a portion corresponding to the gate electrode. The metal layer is patterned using the photoresist pattern to form source and drain electrodes, and the ohmic contact layer and second semiconductor layer are removed using the photoresist pattern as a mask, or using the source and drain electrodes as a mask, to expose portions of the insulating layer and first semiconductor layer. A passivation layer is formed to cover the insulating layer, first semiconductor layer, and source and drain electrodes. A contact hole is formed in the passivation layer, followed by formation of a pixel electrode in electrical contact with the drain electrode through the contact hole.