The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2003
Filed:
Mar. 13, 2000
Tsuguyasu Hatsuda, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
In a delay-power-source-coefficient determining step, a drain saturation current in a P-channel MOSFET is calculated on the basis of specified operating power-source voltage data and of saturation-current parameters such as the mobility of carriers and the thickness of a gate oxide film based on said specified operating power-source voltage data. Thereafter, a ratio of a drain saturation current in the P-channel MOSFET when a reference power-source voltage is applied thereto to the drain saturation current in the P-channel MOSFET when an operating power-source voltage is applied thereto, thereby determining a delay power-source coefficient. Next, in an effective-delay calculating step, effective-delay calculating means multiplies a delay time when the reference power-source voltage calculated by the delay calculating means is applied thereto by the delay power-source coefficient calculated by delay-power-source-coefficient determining means to determine a delay time at the operating power-source voltage.