The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2003

Filed:

Oct. 04, 2001
Applicant:
Inventors:

Jason Chen, Ottawa, CA;

Henry Chow, Kanata, CA;

Mark William Janoska, Carleton Place, CA;

Assignee:

PMC-Sierra Ltd., Burnaby, CA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/18 ;
U.S. Cl.
CPC ...
G11C 8/18 ;
Abstract

Methods and devices for arranging memory access operations to minimize memory bank conflicts between such operations. A fixed pattern of memory access operations is implemented to minimize the effects of a transition between a read memory access operation and a write memory access operation. A write-read-gap (WRG) set pattern of a write memory access operation followed by a read memory access operation and then followed by a set gap when no memory access operation may be undertaken, meets the particular requirements of RDRAM. Within the WRG pattern, read addresses and write addresses are selected to minimize memory bank access conflicts. Such selections are assisted in increasing the efficiency of the memory access operations by defining a set frame size of a specific number of repetitions of the WRG pattern. All memory access operations are then rearranged to conform to the WRG pattern and, the repetitions of the WRG pattern are divided into frames having a size equal to that of the defined frame size. Within each frame, the read addresses to be accessed by read memory operations can be rearranged to minimize memory bank access conflicts with either write addresses to be accessed by write memory operations or other read addresses.


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