The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2003
Filed:
Nov. 20, 2001
Olivier Redon, Seyssinet, FR;
Bernard Dieny, Lans-en-Vercors, FR;
Bernard Rodmacq, Veurey-Voroize, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A magnetic device including at least a memory cell having a first magnetic layer with a fixed magnetization direction. The first magnetic layer spin polarizes a writing current of electrons. The memory cell includes a second magnetic layer having a three-layered stack with a variable magnetization direction. An insulating or semi-conduction layer is formed between the first and second magnetic layers. The variable magnetization direction is oriented by spins of a spin polarized writing current. The three-layered stack includes two magnetic layers separated by a non-magnetic conducting layer. The first magnetic layer aligns the variable magnetization direction with the fixed magnetization direction by directing an incident writing current of electrons perpendicular through the first magnetic layer and then perpendicular through the second magnetic layer. The first magnetic layer opposes the variable magnetization direction with the fixed magnetization direction by directing another incident writing current of electrons perpendicular through the second magnetic layer and then perpendicular through the first magnetic layer to.