The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2003

Filed:

Nov. 21, 2000
Applicant:
Inventors:

Hakeem Oluseyi, Stanford, CA (US);

Moshe Sarfaty, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 2/162 ; H01L 2/100 ; H01L 2/166 ;
U.S. Cl.
CPC ...
G01N 2/162 ; H01L 2/100 ; H01L 2/166 ;
Abstract

A method and an apparatus system feature detecting faults in process conditions of a plasma-based semiconductor processing system by sensing the spectral emissions of the plasma. As a result, the method includes sensing optical energy produced by the plasma and identifying the fault in the process conditions as a function of one or more of the plurality of spectral bands. To that end, the apparatus includes a detector in optical communication with the processing chamber to sense optical energy generated by the plasma, and a spectrum analyzer, in electrical communication with the optical detector. The spectrum analyzer resolves the spectral bands and produces information corresponding thereto. A processor is in electrical communication with the spectrum analyzer, and a memory is in electrical communication with the processor. The memory includes a computer-readable medium having a computer-readable program embodied therein that controls the system to carry-out the method.


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