The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2003

Filed:

Sep. 29, 1999
Applicant:
Inventors:

John A. Higgins, Westlake Village, CA (US);

Moonil Kim, Thousand Oaks, CA (US);

Jonathan Bruce Hacker, Thousand Oaks, CA (US);

Assignee:

Innovative Technology Licensing, LLC, Thousand Oaks, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/60 ; H01P 3/12 ;
U.S. Cl.
CPC ...
H03F 3/60 ; H01P 3/12 ;
Abstract

An improved waveguide wall structure and improved waveguide using the new wall structure as the interior walls of the waveguide. The wall structure comprises a sheet of dielectric material, a series of parallel conductive strips on one side of the dielectric material and a layer of conductive material on the other side. Multiple conductive vias are also included through the dielectric material and between the conductive layer and conductive strips. The new wall structure presents as a series of parallel L-C circuits to a transverse E field at resonant frequency, resulting in a high impedance surface. The wall structure can be used in waveguides that transmit a signal in one polarization or signals that are cross polarized. The new waveguide maintains a near uniform density E field and H field component, resulting in near uniform signal power density across the waveguide cross section.


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