The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2003
Filed:
Mar. 19, 2002
Hideaki Yamauchi, Kawasaki, JP;
Daisuke Matsubara, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The semiconductor device comprises a semiconductor substrate ; a capacitor element formed above the semiconductor substrate and including a lower electrode , a capacitor insulation film formed on the lower electrode and an upper electrode formed on the capacitor insulation film; a shield layer formed at least either of above and below the capacitor element; and a lead-out interconnection layer formed between the capacitor element and the shield layer and electrically connected to the lower electrode or the upper electrode, a plurality of holes being formed in each of the shield layer and the lead-out interconnection layer. The shield layers are formed above and below the MIM capacitor, whereby combination of noises with the MIM capacitor can be prevented.