The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2003
Filed:
Feb. 21, 2002
Applicant:
Inventor:
Hamilton Lu, Los Angeles, CA (US);
Assignee:
International Rectifier Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A single rapid thermal anneal (RTA) process is used to form a low resistivity titanium silicide layer atop a polysilicon gate layer for a MOSgated device. The process employs an amorphous silicon layer formed atop the polysilicon layer, followed by forming a titanium layer atop the amorphous silicon. A single RTA process at a temperature below the temperature of contamination diffusion is carried out, preferably at about 650° C. for 30 seconds. The top of the annealed titanium silicide layer is then stripped, and the remaining layer has a sheet Rho of less than about 2 ohms per square.