The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2003
Filed:
Dec. 28, 1999
Gabriella Fontana, Vimercate, IT;
Luca Pividori, Curno, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A selective silicidation process for electronic devices that are integrated on a semiconductor substrate is presented. The devices have a number of active elements formed with gate region that has at least one polysilicon layer. The process begins with depositing a dielectric layer over the entire surface of the semiconductor. Then portions of the dielectric layer are removed to expose the polysilicon layer in the gate regions. Next, a layer of a transition metal is deposited and subjected to a thermal treatment for selectively reacting it with the polysilicon layers and producing a silicide layer over the gate regions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile