The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2003
Filed:
Aug. 28, 2001
Fumihiko Inoue, Kawasaki, JP;
Masayuki Tanaka, Yokohama, JP;
Other;
Abstract
The method for fabricating the semiconductor device comprises the step of: forming a gate insulation film on a semiconductor substrate ; forming a semiconductor layer containing boron on the gate insulation film ; forming a silicon nitride film having an Si—H bond concentration in the film immediately after deposited which is below 4.3×10 cm measured by FT-IR; and patterning the silicon nitride film and the semiconductor layer to form a gate electrode of a semiconductor layer having the upper surface covered by the silicon nitride film . Whereby the release of hydrogen in the films in the thermal processing after the silicon nitride film has been formed can be decreased, and the boron penetration from the p-type gate electrode can be suppressed.