The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2003
Filed:
Jun. 15, 2001
Isik C. Kizilyalli, Millburn, NJ (US);
Joseph R. Radosevich, South Portland, ME (US);
Agere Systems, Inc., Allentown, PA (US);
Abstract
A method for forming single crystalline silicon-on-insulator (SOI) structures over a silicon substrate includes forming an amorphous silicon layer over an insulating layer and contacting the substrate through the insulating layer. An excimer laser having operating conditions and a wavelength chosen to selectively melt amorphous silicon irradiates the entire substrate surface and is largely non-absorbed by materials other than silicon when incident upon them. Heating of the substrate and other materials is therefore minimal. After a blanket radiation process selectively melts the amorphous silicon layer, cooling conditions are chosen such that a single crystal silicon film is formed during the solidification process due to contact to the single crystal silicon substrate which acts as a seed layer. Various devices may be formed on the SOI islands as well as on exposed portions of the substrate not covered by the SOI islands.