The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2003

Filed:

Mar. 13, 2002
Applicant:
Inventors:

Sung-eun Hong, Scongnam-shi, KR;

Min-ho Jung, Icheon-shi, KR;

Jae-chang Jung, Icheon-shi, KR;

Geun-su Lee, Icheon-shi, KR;

Ki-ho Baik, Icheon-shi, KR;

Assignee:

Hynix Semiconductor Inc, Gyunggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 1/76 ;
U.S. Cl.
CPC ...
G03C 1/76 ;
Abstract

A compound of Formula 10, an organic anti-reflective polymer having the structure of Formula 1 synthesized from the compound of Formula 1 and a preparation method thereof. An anti-reflective coating composition including the above organic anti-reflective polymer, as well as a preparation method of an anti-reflective coating. The anti-reflective coating comprising the disclosed polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the changes in the thickness of the photoresist, prevents back reflection and also solves the problem of CD alteration cause by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and an increase of the production yields. Further, it is also possible to control the k value


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