The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2003
Filed:
Aug. 06, 1999
Osamu Komeda, Anjo, JP;
Hiroshi Hasegawa, Shizuoka, JP;
Toyota Jidosha Kabushiki Kaisha, Aichi-ken, JP;
Abstract
A non-linear optical silica thin film ( ) whose main material is SiO —GeO is formed by irradiating positive or negative polar particles and polarization orientation is carried out in the silica thin film. For example, by repeating, while forming the silica thin film ( ), forming the thin film in a state of irradiating positive particles, forming the thin film in a neutral state, such as irradiation of neutral particles or non-irradiation of particles, forming the thin film in a state of irradiating negative particles, and forming the thin film in a neutral state, a plurality of regions ( - - and - ) in different states of polarization orientation are formed in a direction of film thickness of the silica thin film ( ). Distribution of charges arises in the silica thin film ( ) being formed by irradiation of polar particles and polarization orientation is automatically carried out in the silica thin film ( ). Thus, without carrying out an post process of polarization orientation, such as application of voltage, a polarization orientation process is completed almost simultaneously with completion of forming the silica thin film ( ). Thus, it is possible to form periodical polarization orientation structure in a direction of film thickness.