The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2003
Filed:
Sep. 06, 2001
Applicant:
Inventors:
Seung-Ki Chae, Seoul, KR;
Sang-Gon Lee, Gyeonggi-do, KR;
Sang-Hyuk Chung, Gyeonggi-do, KR;
Seong-Jin Heo, Gyeonggi-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D 5/000 ;
U.S. Cl.
CPC ...
B01D 5/000 ;
Abstract
A method of reducing PFC emissions during a semiconductor manufacturing process that includes a set of sub-processes each of which produces at least one PFC includes the steps of exhausting PFC's produced by each sub-process to a common line to form a combined exhaust stream, treating the combined exhaust stream from each sub-process using a separate PFC abatement system, combining the treated exhaust streams to form a combined treated stream, and wet scrubbing the combined treated stream.