The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Apr. 20, 2001
Toshiaki Fukunaga, Kaisei-machi, JP;
Mitsugu Wada, Kaisei-machi, JP;
Kenji Matsumoto, Kaisei-machi, JP;
Fuji Photo Film Co., Ltd., Kanagawa-Ken, JP;
Abstract
In a semiconductor-laser device: an n-type cladding layer, an optical-waveguide layer, an In Ga As P compressive-strain quantum-well active layer (0<x3≦0.4, 0≦y3≦0.1), an optical-waveguide layer, a p-In Ga P etching-stop layer (0≦x6≦1), a p-In Ga As P etching-stop layer (0≦x1≦0.4, 0≦y1≦0.5), a p-In Ga P layer (x=0.49±0.01), and an n-In Ga P current-confinement layer are formed on an n-GaAs substrate. A stripe groove is formed down to the depth of the upper surface of the p-In Ga P etching-stop layer. A p-In Ga As P cladding layer (x4=0.49y4±0.01, x−0.04≦x4≦x−0.01) is formed over the current-confinement layer and the stripe groove. A p-type contact layer is formed on the p-In Ga As P cladding layer. The absolute value of the product of the strain and the thickness of the active layer does not exceed 0.25 nm, and each of the above layers other than the active layer and the etching-stop layers lattice-matches with GaAs.