The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Jun. 19, 2002
Futoyoshi Kou, Natori, JP;
Other;
Abstract
The present invention provides a highly sensitive TMR device. Since a TMR device is normally manufactured by a thin-film formation technique, the size and weight can be reduced. The thickness of a first spin polarization layer that is stacked on a soft magnetic layer for assisting magnetic field sensing operations and has a higher coercive force and a higher spin polarization rate than the soft magnetic layer is adjusted to a value that is smaller than the thickness of a tunneling layer or smaller than 2 nm, whichever is smaller. With the first spin polarization layer having such a thickness, both a low coercive force and a desirable TMR rate can be obtained. As a result, the magnetic field sensitivity of the TMR device as a sensor can be increased.