The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Aug. 23, 2002
Larry M. Tichauer, La Palma, CA (US);
Steven S. McClure, La Crescenta, CA (US);
The Boeing Company, Chicago, IL (US);
Abstract
A compensation circuit and method for compensating for the threshold shift in an irradiated MOSFET. The method determines the gate threshold voltage to body voltage relationship to vary the body voltage with radiation. The compensation circuit ( ) has at least one MOSFET (Q ) having the same channel type as the MOSFET being compensated (Q ). The at least one matching MOSFET (Q ) is connected to the gate of the MOSFET (Q ) being compensated. At least one MOSFET (Q , Q ) having a channel type that is different from the channel type of the MOSFET (Q ) being compensated is connected to the gate of the matching MOSFET (Q ). The result is that the compensation circuit ( ) controls a negative shift in the body voltage of the MOSFET (Q ) being compensated resulting in a higher threshold voltage.