The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Aug. 25, 2000
Applicant:
Inventors:
Bernhard Lustig, München, DE;
Herbert Schäfer, München, DE;
Lothar Risch, Neubiberg, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/906 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/906 ; H01L 2/976 ;
Abstract
A MOS transistor and a method for fabricating the same include producing a well doped by a first conductivity type in a semiconductor substrate. An epitaxial layer having a dopant concentration of less than 10 cm is disposed on a surface of the doped well. Source/drain regions doped by a second conductivity type, opposite to the first conductivity type, and a channel region, are disposed in the epitaxial layer, and their depth is less than or equal to the thickness of the epitaxial layer. A method for fabricating two complementary MOS transistors is also provided.