The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Jan. 16, 2001
Takatoshi Tsujimura, Fujisawa, JP;
Osamu Tokuhiro, Shiga-ken, JP;
Mitsuo Morooka, Kawasaki, JP;
Takashi Miyamoto, Chofu, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention relates to minimizing a leakage current in a floating island portion formed in a thin film transistor. More specifically, the present invention is directed to a thin film transistor including: a source electrode and a drain electrode disposed above an insulating substrate at a predetermined interval; an s-Si film disposed in relation to the source electrode and drain electrode ; a gate insulating film overlapping the a-Si film ; and a gate electrode overlapping the gate insulating film , in which the a-Si film is disposed between the source electrode and the drain electrode and has a floating island portion above which or beneath which the gate electrode is not formed, and boron ions are implanted into this portion to form a boron-ion-implanted region