The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Apr. 05, 2001
Applicant:
Inventors:
Yoshitaka Sugawara, Higashiosaka, JP;
Katsunori Asano, Nara, JP;
Assignee:
The Kansai Electric Power Co., Inc., Osaka, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A buried gate region, a buried gate contact region and a gate contact region are provided on an SiC substrate. Thereby, a depletion layer expands in the channel region, and a high withstand voltage is attained in the normally off state. By applying a voltage of the built-in voltage or less to a gate, the depletion layer in the channel region becomes narrower and an ON-state resistance becomes low. Furthermore, when a voltage of the built-in voltage or more is applied to the gate, holes are injected from the gate so as to cause the conductivity modulation, and the ON-state resistance becomes further low.