The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Jul. 12, 1999
Applicant:
Inventor:
Ko Noguchi, Tokyo, JP;
Assignee:
NEC Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract
A semiconductor device having a metal oxide semiconductor (MOS) transistor with a gate dielectric film, a gate electrode formed on the gate dielectric film, and source/drain regions formed in a semiconductor substrate. A protective element with a protected electrode overlays of the semiconductor substrate with an intervention of a dielectric film. At least one diffused region is adjacent to the protective electrode in the semiconductor substrate. The protect dielectric is connected to the electrode of the MOS transistor.